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20
2024.12

Power Master Semiconductor在SiC技术和封装解决方案方面的创新
Power Master Semiconductor宣布扩展其eSiC MOSFET系列，推出符合AEC-Q101标准的全新高性能顶部冷却封装。其中包括TSPAK DBC版本和LF版本，专为汽车和工业应用而设计。这些部件具有14mm x 18.58mm的行业标准尺寸和开尔文源引脚布置，旨在提高热性能和降低栅极噪声，提高了60%，这一设计突破降低了导通损耗，因此实现了更好的功率密度和更高的工作频率。这种独特的封装采用Power Master Semiconductor最新一代1200V eSiC MOSFET（Gen2）的尖端技术，在特定导通电阻（Rsp）和短路耐受时间（SCWT）之间进行了权衡。与前代产品相比，新型1200V eSiC MOSFET的开关损耗降低了45%，RDS（ON）降低了20%，SCWT提高了15%。顶部冷却套件的突破其创建的顶部冷却封装旨在满足高压应用的苛刻要求，这是显著的成功之一。具有较长爬电距离的3.6kV强隔离电压需要像细长凹槽这样的创造性想法。 [Read more ...]
02
2024.12

[Press Release] PMS Press Release Unveils Innovative Top-Side Cooling Packages for automotive and industrial applications
New Product Release InformationPower Master Semiconductor Unveils Innovative Top-Side Cooling Packages for automotive and industrial applicationsNovember 29 2024 - Cheongju, Korea – Power Master Semiconductor has announced the expansion of its e SiC MOSFET family with introduction of new AEC-Q101 qualified, high-performance top-side cooling packages. These include the TSPAK DBC version and LF version, specially designed for automotive and industrial applications. The TSPAK offers superior [Read more ...]
22
2024.08

[Press Release] PMS Press Release TOLL Package 650V eSiC MOSFET P08Y24
New Product Release InformationPower Master Semiconductor added TOLL Package to 650V eSiC MOS Portfolio, offering Enhanced High Power Density, Efficiency and Reliability with Improved thermal performance in Compact footprintPower Master Semiconductor has released a new package portfolio, TO leadless (TOLL) package for 650V eSiC MOSFET series to meet the increasing demands for high power density and efficiency with superior switching performance in various applications such as AI data center [Read more ...]
07
2024.08

[News] Power Master Semiconductor推出用于储能系统的1200V SiC MOSFET
기사 원문보기 [Read more ...]
01
2024.08

[News] Power Master Semiconductor Introduces Automotive Qualified 1200 V SiC MOSFET for Electric Vehicles
기사 원문보기 [Read more ...]
31
2024.07

[News] Power Master Semiconductor Released AEC-Q101 Qualified 1200V eSiC MOSFET
기사 원문보기 [Read more ...]
31
2024.07

[News] Power Master Semiconductor announces 650V eSiC MOSFET designed to offer higher efficiency
기사 원문보기 [Read more ...]
26
2024.07

[Press Release] Power Master Semiconductor Announces Automotive-Qualified 1200V e SiC MOSFET
Power Master Semiconductor Announces Automotive-Qualified 1200V e SiC MOSFETJuly 26 2024 - Cheongju, Korea – Power Master Semiconductor (PMS) announced the release of its new AEC-Q101 qualified 1200V e SiC MOSFET in a D2PAK-7L package, designed to revolutionize power electronics in electric vehicles (EVs). PMS’s automotive-grade 1200V e SiC MOSFET offers superior efficiency, high power density, high reliability, and enables bi-directional operation, making it an idea [Read more ...]
22
2024.07

Power Master Semiconductor highlights a broad SiC portfolio at electronica China 2024
Power Master Semiconductor demonstrated its mass-produced semiconductor products, include an expanded SiC portgolio of new 1200V Gen2 eSiC MOSFETs and 650V eSiC MOSFETs. Power Master Semiconductor highlighted new top-side cooling SMD packages, TSPAK LF / TSPAK DBC and PIMs at the electronica China 2024. These products have been supplied and can meet the needs of different customers in various applications. Power Master Semiconductor demonstrated PMS’s 600V and 1200V eSiC MOSFET-based 3.7kW & [Read more ...]
22
2024.07

[Press Release] Power Master Semiconductor Unveils High-Performance 650V eSiC MOSFET for Enhanced Efficiency
Power Master Semiconductor Unveils High-Performance 650V e SiC MOSFET for Enhanced EfficiencyJuly 17, 2024 - Cheongju, Korea – Power Master Semiconductor announced the launch of the 650V e SiC MOSFET, designed to offer higher efficiency, high power density, robust reliability, and ruggedness in hard and soft switching topologies.The rapid growth of Artificial Intelligence (AI) is driving significant demand for data centers, greatly increasing energy needs and spurring inn [Read more ...]
06
2024.07

[Press Release] Power Master Semiconductor Introduces 2nd generation of 1200V e SiC MOSFET for High Performance Applications
Power Master Semiconductor Introduces 2nd generation of 1200V e SiC MOSFET for High Performance Applications July 5, 2024 - Cheongju, Korea – Power Master Semiconductor has released 2nd generation of the 1200V e SiC MOSFET to meet the requirements of higher efficiency, high power density, robust reliability, and ruggedness in various applications such as DC EV charging stations, solar inverters, energy storage systems (ESS), motor drives and indu [Read more ...]
04
2024.07

Invitation PMS booth @ Electronica China 2024
Dear Customer We hope this message finds you well We are excited to announce that Power Master Semiconductor will be participating in the Electronica China 2024, which will be held at the Shanghai New International Expo Centre from July 8th to 10th, 2024. We warmly invite you to visit booth (E3. 3720) to explore our latest technologies and discuss potential business opportunities. We look forward to meeting you in person and exchanging ideas at our exhibition booth. Best Rega [Read more ...]
04
2024.07

[Technical Articles] Pushing the limits with SiC and Super-Junction power technologies
Established in 2018, Power Master Semiconductor (PMS) is a South Korean company with a team boasting over two decades of experience in the power semiconductor industry. The company is focused on developing and producing advanced Silicon Carbide (SiC) diodes and MOSFETs, alongside Super-Junction (SJ) MOSFETs, particularly their innovative eMOS E7 line.original article [Read more ...]
01
2024.02

[Press Release] Power Master Semiconductor Launches PQFN88, the Leadless SMD Package for 600V e MOS E7 Portfolio
Power Master Semiconductor has released a new SMD package portfolio, PQFN88 package for 600V e MOS E7 seriesto deliver high power density and small form factor with superior switching performance for many applicationssuch as servers, adapter, LED lighting, and flat panel display power applications.Power Master Semiconductor’s PQFN88 package for high voltage MOSFETs is an ultra-slim surface-mount packagewith a height of 1mm, as opposed to the 4.5mm height of t [Read more ...]
05
2024.01

[Press Release] Power Master Semiconductor released TOLL Package for Enhanced Thermal Performance, Improved Switching Performance and Power Density for 600V e MOS E7 Portfolio
Power Master Semiconductor has released a new package portfolio, TO leadless (TOLL) package for 600V e MOS E7 series to meet the increasing demandsfor high power density with superior switching performance in various applications such as servers, telecom infrastructure, flat panel display power, ESS, and battery formations.The TOLL package has a footprint of 9.9mm x 11.7mm, reducing the PCB area by 30% compared to the D2PAK 7-lead package.Moreover, w [Read more ...]

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