SiC Diode
1200V 20A SiC Diode | PMS | Leading A | Leading B | Leading C | Leading D |
---|---|---|---|---|---|
VF @ Tc=25℃ | 1.39 V | 1.43 V | 1.53 V | 1.48 V | 1.46 V |
IFSM @ 10ms | 210 A | 220 A | 335 A | 104 A | 200 A |
IR @ Tc=25℃ | 1 uA | 21 uA | 22 uA | 2 uA | 0.1 uA |
Qc @Vr=800V | 121 nC | 138 nC | 114 nC | 123 nC | 148 nC |
Key Features
Key Benefits