[Press Release] Power Master Semiconductor Introduces 2nd generation of 1200V e SiC MOSFET for High Performance Applications
Power Master Semiconductor Introduces 2nd generation of 1200V e SiC MOSFET for High Performance Applications July 5, 2024 - Cheongju, Korea – Power Master Semiconductor has released 2nd generation of the 1200V e SiC MOSFET to meet the requirements of higher efficiency, high power density, robust reliability, and ruggedness in various applications such as DC EV charging stations, solar inverters, energy storage systems (ESS), motor drives and indu [Read more ...]