Unit Process Service
Unit Process Service WAFER Service

WAFER Service

6 Inch SiC Wafer Service

Capability

Clean Class : Class 1Custom development and manufacturing for SiC Diode and MOSFET
Core Technology

  • Front-end processing

    Photolithography : Resolution 0.4um Trench depth : 3um without micro trench High Temperature Anneal/Oxidation: 2000C/1500C High Temperature implant: 600C

  • Thinning and back metallization processing

    Thinning : 200um Laser anneal : Silicidation


SiC Process Capabilities


SiC Process Capabilities

High Temperature Implant ( 600℃ )
Max. Energy : 1.2MeV for Triple Charge. Photolithography
Resolution : 0.4um / Overlay : 0.06um High Temperature Implant Anneal High Temperature Oxidation SiC Trench etch Frontside Ni silicide and etch Metal planarization ( W-Plug ) SiC Wafer Thinning Backside UV Laser Anneal Backside Metal Deposition ( Ti / Ni / Ag )

Available Tools for SiC Processing

Photolithography
· ASML, Nikon ,TEL Mark VII Coating/Develop Tracks Deposition
· PECVD
· AMAT Centura,M2i,XM90 PVD [ Ti / Ni / Ag / AlCu ) Etch
· Dry etch : TCP94XX / 96XX , LAM45XX , Trench etcher
· Wet Etch : Pre-Diff , Pre-metal, Wet etch [ Al, Ni, Oxide, Ti , Ag ]
· Wet Strip : H2SO4 , EKC Implant
· High Temperature Implant Thermal Processing
· UV Laser Anneal
· RTP
· High Temperature Activator & Oxidator
· Horizontal & Vertical Furnace