The eFS-Trench IGBT is a Power Master Semiconductor’s IGBT family .
This technology is optimized for high current capability and high ruggedness. With a breakdown voltage ranging from 650V to 1200V, eFS-Trench IGBT is ideal for various applications such as industrial and home appliances requiring performance and ruggedness.
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Key Features
Field Stop Trench IGBT TechnologyLow Collector and Emitter saturation voltageLow turn on and turn off lossShort circuit capabilityLow revers recovery current and fast anti-parallel FRD175℃ Junction TemperaturePb-free, Halogen Free, and RoHS Compliant
